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QPD2562L

Model Number: QPD2562L

RF Power Transistor from Qorvo

RF Transistor, Power, GaN/SIC HEMT, 2.5 to 3.5 GHz, 16 dB, NI-650 Pkg

Status: Featured | Data Sheet:

| RoHS Compliance: Rohs Compliant

The QPD2562L is a 200 W - 300 W discrete GaN on SiC HEMT which operates from 2.5 to 2.9 GHz and 2.9 to 3.3 GHz providing typically up to 55.4 dBm / 53 dBm respectively, of saturated output power with 13 dB of large-signal gain and 50% / 45% respectively, of drain efficiency.

Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.

Evaluation boards are available upon request.

Part Number: QPD2562L
Manufacturer: Qorvo
Export Status:
Frequency Min: 2.5 GHz
Frequency Max: 3.3 GHz
Output Power: 300 W
Gain: 13 dB
% Typ Efficiency: 65
Supply Voltage: 50 V
Package: NI-650
Process: GaN HEMT
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	QPD2562LEVB01 Qorvo	Evaluation Board for QPD2562L

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Product Specifications For QPD2562L RF Power Transistor

Part Number: QPD2562L Manufacturer: Qorvo Product Description: RF Transistor, Power, GaN/SIC HEMT, 2.5 to 3.5 GHz, 16 dB, NI-650 Pkg

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QPD2562L

RF Power Transistor from Qorvo

RF Transistor, Power, GaN/SIC HEMT, 2.5 to 3.5 GHz, 16 dB, NI-650 Pkg

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QPD2562L

RF Power Transistor from Qorvo

RF Transistor, Power, GaN/SIC HEMT, 2.5 to 3.5 GHz, 16 dB, NI-650 Pkg

Technical Inquiry Request for QPD2562L RF Power Transistor

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