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FPD750SOT89E

Transistors from Qorvo

Transistor, Low Noise, 0.7 to 5 GHz, 24 dBm, 20 dB, 5 V, SOT-89, AlGaAs/InGaAs

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

NOT FOR NEW DESIGNS The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25μmx1500μm Schottky barrier gate defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure is designed for improved linearity over a range of bias conditions and input power levels.

Features:

25dBm Output Power (P1dB)

18dB Small-Signal Gain (SSG)

0.6dB Noise Figure

39dBm OIP3

55% Power-Added Efficiency

FPD750SOT89E: RoHS Compliant (Directive 2002/95/EC)

Part Number: FPD750SOT89E
Manufacturer: Qorvo
Frequency Min: 0.7 GHz
Frequency Max: 5 GHz
Output Power: 24 dBm
Gain: 20 dB
Package: SOT-89
% Typ Efficiency: 55
Supply Voltage: 5 V
Id: 100 mA
Noise Figure: 0.8 dB
Material: AlGaAs/InGaAs

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Product Specifications For FPD750SOT89E Transistors

Part Number: FPD750SOT89E Manufacturer: Qorvo Product Description: Transistor, Low Noise, 0.7 to 5 GHz, 24 dBm, 20 dB, 5 V, SOT-89, AlGaAs/InGaAs

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FPD750SOT89E

Transistors from Qorvo

Transistor, Low Noise, 0.7 to 5 GHz, 24 dBm, 20 dB, 5 V, SOT-89, AlGaAs/InGaAs

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FPD750SOT89E

Transistors from Qorvo

Transistor, Low Noise, 0.7 to 5 GHz, 24 dBm, 20 dB, 5 V, SOT-89, AlGaAs/InGaAs

Technical Inquiry Request for FPD750SOT89E Transistors

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