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TGF3021-SM

Model Number: TGF3021-SM

RF Power Transistor from Qorvo

RF Power Transistor, 0.03 to 4 GHz, 30 W, 19.3 dB, 32 V, GaN, Plastic

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

Qorvo's TGF3021-SM is a 30 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 4 GHz and a 32V supply rail. The device is in an industry standard 3x4mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

Lead-free and ROHS compliant. Evaluation boards are available upon request.

Part Number: TGF3021-SM
Manufacturer: Qorvo
Frequency Min: 0.03 GHz
Frequency Max: 4 GHz
Output Power: 30 W
Gain: 19.3 dB
% Typ Efficiency: 72.7
Supply Voltage: 32 V
Id: 65 mA
Package: QFN
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-TGF3021-SM-001

Part Function	Part Number	Description
Evaluation Board	TGF3021-SM EVB Qorvo	Evauation Board for TGF3021-SM
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	620EP2R0AL20 XSYSTOR Inc.	Evaluation Board, Controller, Switch
Complementary Product	735E22R0 XSYSTOR Inc.	Evaluation Board, Controller, Switch
Complementary Product	795EP2R0 XSYSTOR Inc.	Evaluation Board

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Product Specifications For TGF3021-SM RF Power Transistor

Part Number: TGF3021-SM Manufacturer: Qorvo Product Description: RF Power Transistor, 0.03 to 4 GHz, 30 W, 19.3 dB, 32 V, GaN, Plastic

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Description	Units Per Format	Available

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TGF3021-SM

RF Power Transistor from Qorvo

RF Power Transistor, 0.03 to 4 GHz, 30 W, 19.3 dB, 32 V, GaN, Plastic

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TGF3021-SM

RF Power Transistor from Qorvo

RF Power Transistor, 0.03 to 4 GHz, 30 W, 19.3 dB, 32 V, GaN, Plastic

Technical Inquiry Request for TGF3021-SM RF Power Transistor

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