Part number T1G6003028-FS Product Type RF Power Transistor from Manufacturer Qorvo

Status: Discontinued | Datasheet: Request Data Sheet   | RoHS Compliance: Rohs Compliant
The TriQuint T1G6003028-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven 0.25 um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Part Number:
T1G6003028-FS
Manufacturer:
Qorvo
Frequency Min:
0 GHz
Frequency Max:
6 GHz
Output Power:
30 W
Gain:
14 dB
% Typ Efficiency:
50
Supply Voltage:
28 V
Id:
200 mA
Package:
Earless
Process:
GaN
Type:
RF Power Discrete Transistors
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Replacement Part(s) Suggested

The part T1G6003028-FS is discontinued, below is the suggested replacement part.

Part Number Manufacturer Description
T2G6003028-FL Qorvo RF Power Transistor, DC to 6 GHz, 30 W, 14 dB, 28 V, GaN
T2G6003028-FS Qorvo RF Power Transistor, DC to 6 GHz, 30 W, 14 dB, 28 V, GaN