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T1G3000532-SM

Model Number: T1G3000532-SM

RF Power Transistor from Qorvo

RF Power Transistor, 0.03- 3.5 GHz, 5 W, 15.7 dB, 32 V, GaN

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The TriQuint T1G3000532-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 3.5 GHz. The device is constructed with TriQuint's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Lead-free and ROHS compliant.

Part Number: T1G3000532-SM
Manufacturer: Qorvo
Frequency Min: 0.03 GHz
Frequency Max: 3.5 GHz
Output Power: 5 W
Gain: 15.7 dB
% Typ Efficiency: 64.7
Supply Voltage: 32 V
Id: 25 mA
Package: 5x5mm
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	T1G3000532-SM EVAL Qorvo	Evaluation board for T1G3000532-SM

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Product Specifications For T1G3000532-SM RF Power Transistor

Part Number: T1G3000532-SM Manufacturer: Qorvo Product Description: RF Power Transistor, 0.03- 3.5 GHz, 5 W, 15.7 dB, 32 V, GaN

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T1G3000532-SM

RF Power Transistor from Qorvo

RF Power Transistor, 0.03- 3.5 GHz, 5 W, 15.7 dB, 32 V, GaN

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T1G3000532-SM

RF Power Transistor from Qorvo

RF Power Transistor, 0.03- 3.5 GHz, 5 W, 15.7 dB, 32 V, GaN

Technical Inquiry Request for T1G3000532-SM RF Power Transistor

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