RFMW

Status: Discontinued | Datasheet: Request Data Sheet   | RoHS Compliance: Rohs Compliant
The RFHA3942D is a 48V, 35W, GaN on SiC high power discrete amplifier die designed for military communications, electronic warfare, general purpose broadband, commercial wireless infrastructure, and industrial/scientific/medical applications. Using a second generation advanced high power density gallium nitride (GaN) semiconductor process with improved linearity, the RFHA3942D is able to achieve high efficiency, excellent linearity, and flat gain over a broad frequency range in a single amplifier design with proper packaging and assembly. The RFHA3942D is an unmatched 0.5μm gate, GaN transistor die suitable for many applications with >45.5dBm saturated power, >56% saturated drain efficiency, and >16.5dB small signal gain at 2GHz.

Features:
  • Broadband Operation DC to 4GHz
  • Advanced GaN HEMT Technology
  • Packaged Small Signal Gain = 16.3dB at 2GHz
  • 48V Typical Modulated Packaged Performance
    • POUT 39.5dBm
    • Gain 16.3dB
    • Drain Efficiency 32.6%
    • ACP -40dBc
    • Part Number:
    RFHA3942D
    Manufacturer:
    Qorvo
    Frequency Min:
    0 GHz
    Frequency Max:
    4 GHz
    Output Power:
    35 W
    Gain:
    15.3 dB
    % Typ Efficiency:
    58
    Supply Voltage:
    48 V
    Id:
    1500 mA
    Package:
    DIE
    Process:
    GaN
    Type:
    RF Power Discrete Transistors
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