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RF3930D

Model Number: RF3930D

RF Power Transistor from Qorvo

RF Power Transistor, DC to 4 GHz, 10 W, 19 dBm, 48V, GaN, DIE

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

The RF3930D is a 48V, 10W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RF3930D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper packaging and assembly. The RF3930D is an unmatched 0.5um gate, GaN transistor die suitable for many applications with >42dBm saturated power, >70% saturated drain efficiency, and >19dB small signal gain at 2GHz.

Part Number: RF3930D
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 4 GHz
Output Power: 10 W
Gain: 19 dB
% Typ Efficiency: 70
Supply Voltage: 48 V
Id: 55 mA
Package: DIE
Process: GaN
Type: RF Power Discrete Transistors

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Product Specifications For RF3930D RF Power Transistor

Part Number: RF3930D Manufacturer: Qorvo Product Description: RF Power Transistor, DC to 4 GHz, 10 W, 19 dBm, 48V, GaN, DIE

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RF3930D

RF Power Transistor from Qorvo

RF Power Transistor, DC to 4 GHz, 10 W, 19 dBm, 48V, GaN, DIE

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RF3930D

RF Power Transistor from Qorvo

RF Power Transistor, DC to 4 GHz, 10 W, 19 dBm, 48V, GaN, DIE

Technical Inquiry Request for RF3930D RF Power Transistor

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