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QPD3601

Model Number: QPD3601

RF Power Transistor from Qorvo

RF Transistor, Power, 3.4 - 3.6 GHz, 52.6 dBm, 22 dB,GaN, NI-400 Ceramic

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The Qorvo QPD3601 is a discrete GaN on SiC HEMT which operates from 3.4-3.6 GHz. The device is a single stage matched power amplifier transistor.

The QPD3601 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

QPD3601 can deliver PSAT of 180 W at 50 V operation.

Lead-free and ROHS compliant.

Part Number: QPD3601
Manufacturer: Qorvo
Export Status:
Frequency Min: 3.4 GHz
Frequency Max: 3.6 GHz
Output Power: 180 W
Gain: 22 dB
% Typ Efficiency: 66
Supply Voltage: 50 V
Id: 420 mA
Package: NI-400 Ceramic
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD3601-001

Part Function	Part Number	Description
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	640EP2R0AL50 XSYSTOR Inc.	Evaluation Board
Complementary Product	765EP2R0 XSYSTOR Inc.	Evaluation Board

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Product Specifications For QPD3601 RF Power Transistor

Part Number: QPD3601 Manufacturer: Qorvo Product Description: RF Transistor, Power, 3.4 - 3.6 GHz, 52.6 dBm, 22 dB,GaN, NI-400 Ceramic

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QPD3601

RF Power Transistor from Qorvo

RF Transistor, Power, 3.4 - 3.6 GHz, 52.6 dBm, 22 dB,GaN, NI-400 Ceramic

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QPD3601

RF Power Transistor from Qorvo

RF Transistor, Power, 3.4 - 3.6 GHz, 52.6 dBm, 22 dB,GaN, NI-400 Ceramic

Technical Inquiry Request for QPD3601 RF Power Transistor

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