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QPD2080D

Model Number: QPD2080

RF Power Transistor from Qorvo

RF Power Transistor, GaAs pHEMT, DC to 20 GHz, 11.5 dB, 29.5 dBm, DIE

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

Qorvo's QPD2080D is a discrete 800-micron pHEMT which operates from DC to 20 GHz. The QPD2080D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2080D typically provides 29.5 dBm of output power at P1dB with gain of 11.5 dB and 56% power-added efficiency at 1 dB compression. This performance makes the QPD2080D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.

Part Number: QPD2080D
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 20 GHz
Gain: 11.5 dB
% Typ Efficiency: 29.5
Supply Voltage: 8 V
Id: 130 mA
Package: DIE
Process: GaAs
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD2080D-001

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Product Specifications For QPD2080D RF Power Transistor

Part Number: QPD2080D Manufacturer: Qorvo Product Description: RF Power Transistor, GaAs pHEMT, DC to 20 GHz, 11.5 dB, 29.5 dBm, DIE

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Description	Units Per Format	Available

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QPD2080D

RF Power Transistor from Qorvo

RF Power Transistor, GaAs pHEMT, DC to 20 GHz, 11.5 dB, 29.5 dBm, DIE

Technical Inquiry Request for QPD2080D RF Power Transistor

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QPD2080D

RF Power Transistor from Qorvo

RF Power Transistor, GaAs pHEMT, DC to 20 GHz, 11.5 dB, 29.5 dBm, DIE

Technical Inquiry Request for QPD2080D RF Power Transistor

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