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QPD2025D

Model Number: QPD2025D

RF Power Transistor from Qorvo

RF Power Transistor, GaAs pHEMT, DC to 20 GHz, 14 dB, 24 dBm, DIE

Status: Standard | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2025D typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes the QPD2025D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.

Part Number: QPD2025D
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 20 GHz
Gain: 14 dB
% Typ Efficiency: 58
Supply Voltage: 8 V
Package: DIE
Process: GaAs
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD2025D-001

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Product Specifications For QPD2025D RF Power Transistor

Part Number: QPD2025D Manufacturer: Qorvo Product Description: RF Power Transistor, GaAs pHEMT, DC to 20 GHz, 14 dB, 24 dBm, DIE

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by 10/6/2025

100

by 10/15/2025

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Description	Units Per Format	Available

Description	Units Per Format	Available

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QPD2025D

RF Power Transistor from Qorvo

RF Power Transistor, GaAs pHEMT, DC to 20 GHz, 14 dB, 24 dBm, DIE

Technical Inquiry Request for QPD2025D RF Power Transistor

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QPD2025D

RF Power Transistor from Qorvo

RF Power Transistor, GaAs pHEMT, DC to 20 GHz, 14 dB, 24 dBm, DIE

Technical Inquiry Request for QPD2025D RF Power Transistor

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