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QPD1029L

Model Number: QPD1029L

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 1.2 to 1.4 GHz, 21.3 dB, 61.8 dBm, NI-1230 ( Eared)

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for radar The device can support both CW and pulsed operations.

RoHS compliant.

Part Number: QPD1029L
Manufacturer: Qorvo
Frequency Min: 1.2 GHz
Frequency Max: 1.4 GHz
Output Power: 1500 W
Gain: 21.3 dB
% Typ Efficiency: 75
Supply Voltage: 65 V
Package: NI-1230
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD1029L-001

Part Function	Part Number	Description
Evaluation Board	QPD1029LEVB4 Qorvo	Evaluation Board for QPD1029L

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Product Specifications For QPD1029L RF Power Transistor

Part Number: QPD1029L Manufacturer: Qorvo Product Description: RF Power Transistor, GaN, 1.2 to 1.4 GHz, 21.3 dB, 61.8 dBm, NI-1230 ( Eared)

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Description	Units Per Format	Available

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QPD1029L

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 1.2 to 1.4 GHz, 21.3 dB, 61.8 dBm, NI-1230 ( Eared)

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QPD1029L

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 1.2 to 1.4 GHz, 21.3 dB, 61.8 dBm, NI-1230 ( Eared)

Technical Inquiry Request for QPD1029L RF Power Transistor

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