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QPD1025

Model Number: QPD1025

RF Power Transistor from Qorvo

RF Transistor, 1.0 to 1.1 GHz, 22.9 dB, 62.2 dBm,1500 W, 65 V, GaN, NI-1230 Pkg

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from 1.0 to 1.1 GHz. Input pre-match within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity, 4-lead, earless package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
Lead-free and ROHS compliant.

Part Number: QPD1025
Manufacturer: Qorvo
Frequency Min: 1 GHz
Frequency Max: 1.1 GHz
Output Power: 1800 W
Gain: 22.5 dB
% Typ Efficiency: 77.2
Supply Voltage: 65 V
Id: 1500 mA
Package: NI-1230
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD1025-001

Part Function	Part Number	Description
Evaluation Board	QPD1025EVB1 Qorvo	Evaluation Board for QPD1025
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	QPD1025L Qorvo	RF Transistor, .96 to 1.215 GHz, 1800 W, 65 V, 22.5 dB gain, NI-1230 Eared Pkg

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Product Specifications For QPD1025 RF Power Transistor

Part Number: QPD1025 Manufacturer: Qorvo Product Description: RF Transistor, 1.0 to 1.1 GHz, 22.5 dB, 62.2 dBm,1800 W, 65 V, GaN, Earless, NI-1230 Pkg

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QPD1025

RF Power Transistor from Qorvo

RF Transistor, 1.0 to 1.1 GHz, 22.9 dB, 62.2 dBm,1500 W, 65 V, GaN, NI-1230 Pkg

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QPD1025

RF Power Transistor from Qorvo

RF Transistor, 1.0 to 1.1 GHz, 22.9 dB, 62.2 dBm,1500 W, 65 V, GaN, NI-1230 Pkg

Technical Inquiry Request for QPD1025 RF Power Transistor

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