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QPD1000A

Model Number: QPD1000A

RF Power Transistor from Qorvo

RF Power Transistor, .030 to 1.215 GHz, 15W, 28 V, GaN

Status: Standard | Data Sheet:

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QPD1000A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1215 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios.

Part Number: QPD1000A
Manufacturer: Qorvo
Frequency Min: 0.03 GHz
Frequency Max: 1.215 GHz
Gain: 16 dB
% Typ Efficiency: 60
Supply Voltage: 28 V
Process: GaN HEMT
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	QPD1000AEVB Qorvo	Evaluation Board for QPD1000A

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Product Specifications For QPD1000A RF Power Transistor

Part Number: QPD1000A Manufacturer: Qorvo Product Description: RF Power Transistor, .030 to 1.215 GHz, 15W, 28 V, GaN

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QPD1000A

RF Power Transistor from Qorvo

RF Power Transistor, .030 to 1.215 GHz, 15W, 28 V, GaN

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QPD1000A

RF Power Transistor from Qorvo

RF Power Transistor, .030 to 1.215 GHz, 15W, 28 V, GaN

Technical Inquiry Request for QPD1000A RF Power Transistor

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