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QPD0011

Model Number: QPD0011

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 3.3 to 3.6 GHz, 13.3 dB, 49.5 dBm, 60 W, DFN, 7 x 6.5 mm

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

The QPD0011 is an asymmetric dual-path discrete GaN on SiC HEMT in a DFN package which operates from 3.3 to 3.6 GHz. In each path is a single-stage amplifier transistor. QPD0011 can deliver an average power of 15 W in a Doherty configuration. Applications include 5G macrocell and small cell base stations.

Lead free and RoHS compliant.

Part Number: QPD0011
Manufacturer: Qorvo
Frequency Min: 3.3 GHz
Frequency Max: 3.6 GHz
Output Power: 60 W
Gain: 13.3 dB
% Typ Efficiency: 48
Supply Voltage: 48 V
Id: 65 mA
Package: DFN
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	QPD0011EVB1 Qorvo	Evaluation Board for QPD0011

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Product Specifications For QPD0011 RF Power Transistor

Part Number: QPD0011 Manufacturer: Qorvo Product Description: RF Power Transistor, GaN, 3.3 to 3.6 GHz, 13.3 dB, 49.5 dBm, 60 W, DFN, 7 x 6.5 mm

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QPD0011

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 3.3 to 3.6 GHz, 13.3 dB, 49.5 dBm, 60 W, DFN, 7 x 6.5 mm

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QPD0011

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 3.3 to 3.6 GHz, 13.3 dB, 49.5 dBm, 60 W, DFN, 7 x 6.5 mm

Technical Inquiry Request for QPD0011 RF Power Transistor

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