Qorvo's QPA1010D is an X-band high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process (QGaN15). The QPA1010D operates from 7.9 - 11 GHz and typically provides 15 W saturated output power with power-added efficiency of 38% and large-signal gain of 18 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost.
QPA1010D can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both CW and pulse operations.
The QPA1010D is matched to 50 ohm with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance and operational flexibility allows it support satellite communication and data links, as well as, military and commercial radar systems.
The QPA1010D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
Part Number:
QPA1010D
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Manufacturer:
Qorvo
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Export Status:
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Type:
RF Power Die
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Frequency Min:
7.9 GHz
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Frequency Max:
11 GHz
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P1dB:
41.9 dBm
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Psat:
42 dBm
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Gain:
25 dB
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Supply Voltage \ Vd Max:
24 V
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Quiescent Current \ Id:
600 mA
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Package:
DIE
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Power Added Efficiency:
38 %
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Process:
GaN
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Description | Units Per Format | Available |
Description | Units Per Format | Available |