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MRF085HR5

RF Power Transistor from NXP

RF Power Transistor, 0.0018 to 1.215 GHz, 85 W, Typ. Gain in dB is 25.6 @ 520 MHz, 50 V, SOT1911-1, LDMOS

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

RF Power LDMOS Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications and sub--GHz aerospace and defense and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 1215 MHz.

Features

Unmatched input and output allowing wide frequency range utilization
Device can be used single--ended or in a push--pull configuration
Characterized from 30 to 50V for ease of use
Suitable for linear application
Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation
Included in NXP product longevity program with assured supply for a minimum of 15 years after launch

Typical Applications

Industrial, scientific, medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- Industrial heating, welding and drying systems
Broadcast
- Radio broadcast
- VHF TV broadcast
Aerospace
- VHF omnidirectional range (VOR)
- HF and VHF communication
- Weather radar
Mobile radio
- VHF and UHF radios

Part Number: MRF085HR5
Manufacturer: NXP
Frequency Min: 0.0018 GHz
Frequency Max: 1.215 GHz
Output Power: 85 W
Gain: 25.6 dB
% Typ Efficiency: 73.3
Supply Voltage: 50 V
Package: SOT1911-1
Process: LDMOS
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Complementary Product	AFT05MS004NT1 NXP	RF Power Transistor, 0.136 to 0.941 GHz, 4 W, Typ.Gain in dB is 20.9 @ 520 MHz, 7.5 V, LDMOS, SOT-89A

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Product Specifications For MRF085HR5 RF Power Transistor

Part Number: MRF085HR5 Manufacturer: NXP Product Description: RF Power Transistor, 0.0018 to 1.215 GHz, 85 W, Typ. Gain in dB is 25.6 @ 520 MHz, 50 V, SOT1911-1, LDMOS

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MRF085HR5

RF Power Transistor from NXP

RF Power Transistor, 0.0018 to 1.215 GHz, 85 W, Typ. Gain in dB is 25.6 @ 520 MHz, 50 V, SOT1911-1, LDMOS

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MRF085HR5

RF Power Transistor from NXP

RF Power Transistor, 0.0018 to 1.215 GHz, 85 W, Typ. Gain in dB is 25.6 @ 520 MHz, 50 V, SOT1911-1, LDMOS

Technical Inquiry Request for MRF085HR5 RF Power Transistor

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