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MMA051PP45

Amplifier from Microchip

Amplifier, Power, 0 to 22 GHz, 30 dBm, 14 dB

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

MMA051PP45 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) distributed amplifier that operates between DC and 22 GHz. It is ideal for test instrumentation, wideband military and space applications. The amplifier provides a flat gain of 14 dB, 3.5 dB noise figure, and 30 dBm of output power at 3 dB gain compression at 10 GHZ with a nominal bias condition of 10 V 350 mA. Output IP3 is typically 35 dBm. The MMA051PP45 amplifier features RF I/Os that are internally matched to 50 Ω, which is ideal for any surface mount technology (SMT) assembly equipment.

Part Number: MMA051PP45
Manufacturer: Microchip
Frequency Min: 0 GHz
Frequency Max: 22 GHz
P1dB: 29 dBm
Gain: 14 dB
IP3: 39 dBm
Supply Voltage \ Vd Min: 10 V
Quiescent Current \ Id: 350 mA
Noise Figure: 3.2 dB
Package: QFN 5x5mm
Process: GaAs

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Part Number: MMA051PP45 Manufacturer: Microchip Product Description: Amplifier, Power, 0 to 22 GHz, 30 dBm, 14 dB

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MMA051PP45

Amplifier from Microchip

Amplifier, Power, 0 to 22 GHz, 30 dBm, 14 dB

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MMA051PP45

Amplifier from Microchip

Amplifier, Power, 0 to 22 GHz, 30 dBm, 14 dB

Technical Inquiry Request for MMA051PP45 Amplifier

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