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CLF3H0060S-30U

RF Power Transistor from Ampleon

RF Power Transistor, 0 to 6 GHz, 30 W, 17 dB, 50 V, SOT1227B. GaN

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The CLF3H0060S-30 is a 30 W general purpose, unmatched broadband GaN-SiC HEMT transistors that is usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.

Features and Benefits:

High efficiency
Low thermal resistance
Excellent ruggedness

Part Number: CLF3H0060S-30U
Manufacturer: Ampleon
Frequency Min: 0 GHz
Frequency Max: 6 GHz
Output Power: 30 W
Gain: 17 dB
% Typ Efficiency: 61.5
Supply Voltage: 50 V
Package: SOT-1227B
Process: GaN
Type: RF Power Discrete Transistors

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Product Specifications For CLF3H0060S-30U RF Power Transistor

Part Number: CLF3H0060S-30U Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 0 to 6 GHz, 30 W, 17 dB, 50 V, SOT1227B. GaN

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Description	Units Per Format	Available

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CLF3H0060S-30U

RF Power Transistor from Ampleon

RF Power Transistor, 0 to 6 GHz, 30 W, 17 dB, 50 V, SOT1227B. GaN

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CLF3H0060S-30U

RF Power Transistor from Ampleon

RF Power Transistor, 0 to 6 GHz, 30 W, 17 dB, 50 V, SOT1227B. GaN

Technical Inquiry Request for CLF3H0060S-30U RF Power Transistor

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