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BLF278

BL Transistors from P1dB

RF Power Transistor, 0.005 to 0.225 GHz, 250 W, 16 dB, 50 V, VDMOS, SOT-262A1

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors.

Features and benefits

High power gain
Easy power control
Good thermal stability
Gold metallization ensures excellent reliability

Applications

Broadcast transmitters in the VHF frequency range.

Part Number: BLF278
Manufacturer: P1dB
Frequency Min: 0.005 GHz
Frequency Max: 0.225 GHz
Output Power: 250 W
Gain: 16 dB
Supply Voltage: 50 V
Package: SOT262A1
Process: VDMOS
Type: RF Power Discrete Transistors

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Product Specifications For BLF278 RF Power Transistor

Part Number: BLF278 Manufacturer: P1dB Product Description: RF Power Transistor, 0.005 to 0.225 GHz, 250 W, 16 dB, 50 V, VDMOS, SOT-262A1

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Description	Units Per Format	Available

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BLF278

BL Transistors from P1dB

RF Power Transistor, 0.005 to 0.225 GHz, 250 W, 16 dB, 50 V, VDMOS, SOT-262A1

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BLF278

BL Transistors from P1dB

RF Power Transistor, 0.005 to 0.225 GHz, 250 W, 16 dB, 50 V, VDMOS, SOT-262A1

Features and benefits

Applications

Technical Inquiry Request for BLF278 RF Power Transistor

Software Terms & Conditions

Products

Manufacturers

Support

Accreditations

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Connect

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About RFMW