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BLF177

BL Transistors from P1dB

RF Power Transistor, 0.005 to 0.175 GHz, 150 W, 20 dB, 50 V, VDMOS, SOT-121B

Status: Standard | Datasheet: Request Data Sheet | RoHS Compliance:

Ampleon's Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange.

Features and benefits

High power gain
Easy power control
Good thermal stability
Withstands full load mismatch.

Applications

Designed for industrial and military applications in the HF/VHF frequency range.

Part Number: BLF177
Manufacturer: P1dB
Frequency Min: 0.002 GHz
Frequency Max: 0.175 GHz
Output Power: 150 W
Gain: 20 dB
Supply Voltage: 50 V
Package: .5004LFL
Process: MOSFET
Type: RF Power Discrete Transistors

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Product Specifications For BLF177 RF Power Transistor

Part Number: BLF177 Manufacturer: P1dB Product Description: RF Power Transistor, 0.005 to 0.175 GHz, 150 W, 20 dB, 50 V, VDMOS, SOT-121B

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Description	Units Per Format	Available

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BLF177

BL Transistors from P1dB

RF Power Transistor, 0.005 to 0.175 GHz, 150 W, 20 dB, 50 V, VDMOS, SOT-121B

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BLF177

BL Transistors from P1dB

RF Power Transistor, 0.005 to 0.175 GHz, 150 W, 20 dB, 50 V, VDMOS, SOT-121B

Features and benefits

Applications

Technical Inquiry Request for BLF177 RF Power Transistor

Software Terms & Conditions

Products

Manufacturers

Support

Accreditations

Subscribe to Our Newsletter

Connect

Contact

Join Our Team!

About RFMW