Part number ART2K0FEU Product Type RF Power Transistor from Manufacturer Ampleon

Status: Standard | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

Features and Benefits: 

  • High breakdown voltage enables class E operation up to VDS = 53 V
  • Qualified up to a maximum of VDS = 65 V
  • Characterized from 30 V to 65 V to support a wide range of applications
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation

Applications: 


Industrial, scientific and medical applications

  • Plasma generators
  • MRI systems
  • CO2 lasers
  • Particle accelerators

Broadcast

  • FM radio
  • VHF TV

Communications

  • Non cellular communications
  • UHF radar
Part Number:
ART2K0FEU
Manufacturer:
Ampleon
Frequency Min:
0.001 GHz
Frequency Max:
0.4 GHz
Output Power:
2000 W
Gain:
28.4 dB
% Typ Efficiency:
72.1
Supply Voltage:
65 V
Package:
SOT539AN
Process:
LDMOS
Type:
RF Power Discrete Transistors
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