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AFM907NT1

RF Power Transistor from NXP

RF Power Transistor, 0.136 to 0.941 GHz, 8 W, Typ. Gain in dB is 20.7 @ 520 MHz, 8 W, SOT1862-1, LDMOS

Status: No new designs | Data Sheet:

| RoHS Compliance: Rohs Compliant

High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.

Part Number: AFM907NT1
Manufacturer: NXP
Frequency Min: 0.136 GHz
Frequency Max: 0.941 GHz
Output Power: 8 W
Gain: 20.7 dB
% Typ Efficiency: 73.9
Supply Voltage: 7.5 V
Package: SOT1862-1
Process: LDMOS
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	AFM907N/RFPOWERDEMO NXP	Evaluation Board for AFM907N
Complementary Product	MMG3014NT1 NXP	Amplifier, 0.04 to 4 GHz, 25 dBm, Typ. Gain in dB is 19.5 @ 900 MHz, 5 V, SOT-89A, InGaP HBT

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Product Specifications For AFM907NT1 RF Power Transistor

Part Number: AFM907NT1 Manufacturer: NXP Product Description: RF Power Transistor, 0.136 to 0.941 GHz, 8 W, Typ. Gain in dB is 20.7 @ 520 MHz, 8 W, SOT1862-1, LDMOS

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AFM907NT1

RF Power Transistor from NXP

RF Power Transistor, 0.136 to 0.941 GHz, 8 W, Typ. Gain in dB is 20.7 @ 520 MHz, 8 W, SOT1862-1, LDMOS

Technical Inquiry Request for AFM907NT1 RF Power Transistor

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AFM907NT1

RF Power Transistor from NXP

RF Power Transistor, 0.136 to 0.941 GHz, 8 W, Typ. Gain in dB is 20.7 @ 520 MHz, 8 W, SOT1862-1, LDMOS

Technical Inquiry Request for AFM907NT1 RF Power Transistor

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