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3135GN-280LV

RF Power Transistor from Microchip

COMMON SOURCE, class AB, GaN on SiC HEMT transistor

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Part Number: 3135GN-280LV
Manufacturer: Microchip
Frequency Min: 3.1 GHz
Frequency Max: 3.5 GHz
Output Power: 330 W
Gain: 13.7 dB
% Typ Efficiency: 58
Supply Voltage: 125 V
Id: 6 to 36 mA
Package: 55-KP
Process: GaN HEMT
Power: 280 W
Avg Power: 330 W
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	3135GN-280LV EVAL Microchip	Eval Board for 3135GN-280LV

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Part Number: 3135GN-280LV Manufacturer: Microchip Product Description: COMMON SOURCE, class AB, GaN on SiC HEMT transistor

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3135GN-280LV

RF Power Transistor from Microchip

COMMON SOURCE, class AB, GaN on SiC HEMT transistor

Technical Inquiry Request for 3135GN-280LV RF Power Transistor

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3135GN-280LV

RF Power Transistor from Microchip

COMMON SOURCE, class AB, GaN on SiC HEMT transistor

Technical Inquiry Request for 3135GN-280LV RF Power Transistor

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