- 40/110 GHz transition frequency allows for applications up to 18 GHz and beyond
- High gain of 13.5 dB at 12 GHz with a low noise figure of 1.45 dB
- High linearity of 34 dBm (OIP3) at 1.8 GHz
- Consuming only 3 mA to generate 13.5 dB gain at 12 GHz
- Plastic surface-mount SOT343F package for high performance and easy manufacturing
- 2nd and 3rd LNA stage and mixer stage in DBS LNBs, Ka/Ku band DROs
- Satellite radio (SDARS) LNA, C-band/ X-band high output buffer amplifiers
- High linearity applications
- Low current battery equipped applications
- LNA for microwave communications systems
- Medium output power applications, microwave driver/buffer applications, and more
The devices in this family of 6th (Si) and 7th (SiGe:C) generation RF transistors can be used to perform nearly any RF function. For example, the BFUx10F, BFUx30F, BFU725/N1 can be used as low noise amplifiers, while the BFUx60F and BFUx90F can be used as high linearity and high output amplifiers. 6th generation transistors support products designed for 5V and above while 7th generation transistors are designed for 2.8V battery operated applications, where power consumption is important. Other options include using these transistors as buffer amplifiers, mixers, and oscillators.
Higher transition frequencies (40 to 110 GHz) enable higher application frequencies (24/77 GHz car radar, 18 GHz Ka band, 3.5-3.7 WiMas, etc.), and the devices meet the low current requirements of wideband applications.
As a result, these devices are ideal for use in a very wide range of applications: 2nd and 3rd LNA stage and mixer stage in DBS LNBs, Ka/Ku band DROs, satellite radio (SDARS) LNA, C-band/X-band high output buffer amplifiers, AMR, WLAN/WiFi, ZigBee, Bluetooth, FM radio, GPS, cellular (LTE, UMTS), mobile TV, RKE, high linearity applications, low current battery equipped applications, low noise amplifiers for microwave communications systems, medium output power applications, microwave driver/buffer applications, and more.