Qorvo: RF Power Amplifier Module: TQM7M5050

RF Power Amplifier Module, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

Amplifier, Power Amplifier Module, Quad-Band GSM/EDGE
Manufacturer: Qorvo
Status: Standard
Data Sheet: TQM7M5050 Data Sheet
RoHS Compliance: No
The TQM7M5050 is fully matched input power controlled, multibias state, Quad-Band GSM/EDGE PAM designed for use with the Qualcomm multi-mode solutions supporting Linear EDGE. The PA output power is controlled by the input power coming from the transceiver in both GMSK and 8PSK modes and thus does not require a Vramp input. Additionally, the small 5 mm x 3.5 mm package requires minimum board space and allows for high levels of phone integration. The TQM7M5050 is designed on TriQuint's advanced InGaP HBT GaAs technology with CuFlip TM assembly offering state of the art reliability, temperature stability and ruggedness.

  • Small 14-pin 5.0  x 3.5 x 0.9 mm module
  • Input power controlled (predistortion required in EDGE mode)
  • Low-Band has 2 modes – HBM and LBM
  • High-Band has 2 modes – HBM and LBM
  • TriQuint's GaAs HBT / CuFlipTM PA technology
  • Built in CMOS controller
  • Optimized for 50 ohm system
  • MSL3 260°C / RoHS / Halogen-free
  • Pricing
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