Qorvo: RF Power Transistor: TGF3020-SM

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

TGF3020-SM
RF Power Transistor, 4 to 6 GHz, 5 W, 12.7 dB, 32 V, GaN, Plastic, RF Input-Matched
Manufacturer: Qorvo
Status: Standard
Data Sheet: TGF3020-SM Data Sheet
RoHS Compliance: Qorvo, TGF3020-SM, RF Power Transistor, RF Power Transistor, 4 to 6 GHz, 5 W, 12.7 dB, 32 V, GaN, Plastic, RF Input-Matched (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
4 GHz
Frequency Max:
6 GHz
Output Power:
5 W
Gain:
12.7 dB
% typ. Efficiency:
60.1
Supply Voltage:
32 V
Id:
326 mA
Package:
QFN 3x3mm
Process:
GaN
Also Available
Part FunctionPart NumberDescription
Evaluation Board TGF3020-SM-EVB1 Qorvo Evaluation board for TGF3020-SM, 5.3- 5.9 GHz
Evaluation Board TGF3020-SM-EVB2 Qorvo Evaluation board for TGF3020-SM, 4-6 GHz
Qorvo, RF Power Transistor, TGF3020-SM, RFMW Ltd (RFMW)

The Qorvo TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

Pricing
QtyPrice
1 - 24 $45.00
25 - 99 $40.00
100 - 249 $35.00
250 - 499 $32.00
500 - 999 $30.00
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Availability
Available: 67
Call 1-877-367-7369 for Availability or Get a Quote
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