Qorvo: RF Power Transistor: TGF3015-SM

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

TGF3015-SM
RF Power Transistor, 0.03- 3 GHz, 10 W, 17.1 dB, 32 V, GaN, Plastic
Manufacturer: Qorvo
Status: Standard
Data Sheet: TGF3015-SM Data Sheet
RoHS Compliance: Qorvo, TGF3015-SM, RF Power Transistor, RF Power Transistor, 0.03- 3 GHz, 10 W, 17.1 dB, 32 V, GaN, Plastic (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0.03 GHz
Frequency Max:
3 GHz
Output Power:
10 W
Gain:
17.1 dB
% typ. Efficiency:
70.9
Supply Voltage:
32 V
Id:
50 mA
Package:
QFN
Process:
GaN
Also Available
Part FunctionPart NumberDescription
Evaluation Board TGF3015-SM EVAL Qorvo Evaluation board for TGF3015-SM
Qorvo, RF Power Transistor, TGF3015-SM, RFMW Ltd (RFMW)

TriQuint's TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

The device is housed in an industry-standard 3 x 3 mm package that saves real estate of already space-constrained handheld radios.

Lead-free and ROHS compliant.

Pricing
QtyPrice
1 - 24 $58.00
25 - 99 $51.00
100 - 249 $45.00
250 - 499 $41.00
500 - 999 $38.00
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Availability
Available: 77
Call 1-877-367-7369 for Availability or Get a Quote
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