Qorvo: RF Power Transistor: TGF2929-FS

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

TGF2929-FS
RF Power Transistor, DC to 3.5 GHz, 100 W, 14 dB, 28 V, GaN, Flangeless
Manufacturer: Qorvo
Status: Standard
Data Sheet: TGF2929-FS Data Sheet
RoHS Compliance: Qorvo, TGF2929-FS, RF Power Transistor, RF Power Transistor, DC to 3.5 GHz, 100 W, 14 dB, 28 V, GaN, Flangeless (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0 GHz
Frequency Max:
3.5 GHz
Output Power:
100 W
Gain:
14 dB
% typ. Efficiency:
50
Supply Voltage:
28 V
Id:
260 mA
Package:
Flangeless
Process:
GaN
Also Available
Part FunctionPart NumberDescription
Evaluation Board TGF2929-FS/FL EVAL Qorvo Evaluation Board for TGF2929-FS or -FL, 3.1 to 3.5 GHz
Complementary Product TGF2929-FL Qorvo RF Power Transistor, DC to 3.5 GHz, 100 W, 14 dB, 28 V, GaN
Qorvo, RF Power Transistor, TGF2929-FS, RFMW Ltd (RFMW)

The TriQuint Qorvo TGF2929-FL is a 107 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Lead-free and ROHS compliant.

Pricing
QtyPrice
1 - 24 $351.00
25 - 99 $316.78
100 - 249 $285.89
250 - 499 $271.60
500 - 999 $258.02
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Availability
Call 1-877-367-7369 for Availability or Get a Quote
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