Qorvo: RF Power Transistor: TGF2022-60

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

TGF2022-60
RF Power Transistor, 0 to 20 GHz, 6 W, 12.1 dB, 12 V, GaAs, 0.57 X 2.93 X 0.10 mm, pHEMT
Manufacturer: Qorvo
Status: Standard
Data Sheet: TGF2022-60 Data Sheet
RoHS Compliance: Qorvo, TGF2022-60, RF Power Transistor, RF Power Transistor, 0 to 20 GHz, 6 W, 12.1 dB, 12 V, GaAs, 0.57 X 2.93 X 0.10 mm, pHEMT (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0 GHz
Frequency Max:
20 GHz
Output Power:
6 W
Gain:
12 dB
% typ. Efficiency:
57
Supply Voltage:
12 V
Id:
448 mA
Package:
DIE
Process:
GaAs
The TriQuint TGF2022-60 is a discrete 6.0 mm pHEMT which operates from DC to 20 GHz. The part is designed using TriQuint's proven standard 0.35um power pHEMT production process. The TGF2022-60 typically provides greater than 38 dBm of saturated output power with power gain of 12 dB. The maximum power added efficiency is 57% which makes the TGF2022-60 appropriate for high efficiency applications. The TGF2022-60 is also ideally suited for point-to-point radio, high-reliability space and military applications. The part is lead-free and RoHS compliant and has a protective surface passivation layer providing environmental robustness.

Features:
  • Frequency range: DC to 20 GHz
  • > 38 dBm nominal Psat
  • 57% maximum PAE
  • 12 dB nominal power gain
  • Suitable for high reliability applications
  • 6.0 mm x 0.35 um Power pHEMT
  • Nominal bias Vd = 8 to 12 V, Idq = 448 to 752 mA (under RF drive, Id rises from 448 mA to 1480 mA)
  • Chip dimensions: 0.57 x 2.93 x 0.10 mm (0.022 x 0.115 x 0.004 in)
  • Pricing
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    1 - 24 $47.94
    25 - 99 $40.75
    100 - 249 $34.76
    250 - 499 $31.17
    500 - 999 $27.57
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    Availability
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