Qorvo: RF Power Transistor: TGF2022-12

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

TGF2022-12
RF Power Transistor, 0 to 20 GHz, 1.2 W, 13 dB, 12 V, GaAs, 0.57 X 0.79 X 0.10 mm, pHEMT
Manufacturer: Qorvo
Status: Standard
Data Sheet: TGF2022-12 Data Sheet
RoHS Compliance: Qorvo, TGF2022-12, RF Power Transistor, RF Power Transistor, 0 to 20 GHz, 1.2 W, 13 dB, 12 V, GaAs, 0.57 X 0.79 X 0.10 mm, pHEMT (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0 GHz
Frequency Max:
20 GHz
Output Power:
1.2 W
Gain:
13 dB
% typ. Efficiency:
51.9
Supply Voltage:
12 V
Id:
150 mA
Package:
DIE
Process:
GaAs
The TriQuint TGF2022-12 is a discrete 1.2 mm pHEMT which operates from DC to 20 GHz. The part is designed using TriQuint's proven standard 0.35um power pHEMT production process. The TGF2022-12 typically provides greater than 31 dBm of saturated output power with power gain of 13 dB. The maximum power added efficiency is 58% which makes the TGF2022-12 appropriate for high efficiency applications. The TGF2022-12 is also ideally suited for point-to-point radio, high-reliability space and military applications. The part is lead-free and RoHS compliant and has a protective surface passivation layer providing environmental robustness.

Features:
  • Frequency range: DC to 20 GHz
  • > 31 dBm nominal Psat
  • 58% maximum PAE
  • 39 dBm nominal OIP3
  • 13 dB nominal power gain
  • Suitable for high reliability applications
  • 1.2 mm x 0.35 um Power pHEMT
  • Nominal bias Vd = 8 to 12 V, Idq = 90 to 150 mA (under RF drive, Id rises from 90 mA to 300 mA)
  • Chip dimensions: 0.57 x 0.79 x 0.10 mm (0.022 x 0.031 x 0.004 in)
  • Pricing
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    1 - 24 $27.64
    25 - 99 $23.50
    100 - 249 $20.04
    250 - 499 $17.97
    500 - 999 $15.90
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    Availability
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