Qorvo: RF Power Transistor: TGF2021-01

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

TGF2021-01
RF Power Transistor, 0 to 12 GHz, 1 W, 11 dB, 12 V, GaAs, 0.57 X 0.53 X 0.10 mm, pHEMT
Manufacturer: Qorvo
Status: Standard
Data Sheet: TGF2021-01 Data Sheet
RoHS Compliance: Qorvo, TGF2021-01, RF Power Transistor, RF Power Transistor, 0 to 12 GHz, 1 W, 11 dB, 12 V, GaAs, 0.57 X 0.53 X 0.10 mm, pHEMT (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0 GHz
Frequency Max:
12 GHz
Output Power:
1 W
Gain:
11 dB
% typ. Efficiency:
55
Supply Voltage:
12 V
Id:
75 mA
Package:
DIE
Process:
GaAs
The TriQuint TGF2021-01 is a discrete 1 mm pHEMT which operates from DC to 12 GHz. The part is designed using TriQuint's proven standard 0.35um power pHEMT production process. The TGF2021-01 typically provides greater than 30 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-01 appropriate for high efficiency applications. The TGF2021-01 is also ideally suited for point-to-point radio, high-reliability space and military applications. The part is lead-free and RoHS compliant and has a protective surface passivation layer providing environmental robustness.

Features:
  • Frequency range: DC to 12 GHz
  • > 30 dBm nominal Psat
  • 59% maximum PAE
  • 11 dB nominal power gain
  • Suitable for high reliability applications
  • 1 mm x 0.35 um Power pHEMT
  • Nominal bias Vd = 8 to 12 V, Idq = 75 to 125 mA (under RF drive, Id rises from 75 mA to 240 mA)
  • Chip dimensions: 0.57 x 0.53 x 0.10 mm (0.022 x 0.021 x 0.004 in)
  • Pricing
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    1 - 24 $23.38
    25 - 99 $19.87
    100 - 249 $16.95
    250 - 499 $15.20
    500 - 999 $13.45
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    Availability
    Available: 58
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