Qorvo: Transistors: TGF2018

Transistors, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

TGF2018
Transistor, DC- 20 GHz, 22 dBm, 14.5 dB, 1 dB NF, 8V DIE
Manufacturer: Qorvo
Status: Standard
Data Sheet: TGF2018 Data Sheet
RoHS Compliance: Qorvo, TGF2018, Transistors, Transistor, DC- 20 GHz, 22 dBm, 14.5 dB, 1 dB NF, 8V DIE (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0 GHz
Frequency Max:
26.5 GHz
Output Power:
22 dBm
Gain:
14.5 dB
% typ. Efficiency:
55
Supply Voltage:
8 V
Id:
29 mA
Package:
DIE
Noise Figure:
1 dB
Material:
GaAs pHEMT
Also Available
Part FunctionPart NumberDescription
Complementary Product TGF2025 Qorvo Transistor, DC- 20 GHz, 25 dBm, 14 dB, 0.9 dB NF, 8V, DIE
Complementary Product TGF2040 Qorvo Transistor, DC - 20 GHz, 26 dBm, 13 dB, 1.1 dB NF, 8V, DIE
Complementary Product TGF2060 Qorvo Transistor, DC- 20 GHz, 28 dBm, 12 dB, 1.4 dB NF, 8V, DIE
Complementary Product TGF2080 Qorvo Transistor, DC- 20 GHz, 29.5 dBm, 11.5 dB, 8V, DIE
Qorvo, Transistors, TGF2018, RFMW Ltd (RFMW)
The TriQuint TGF2018 is a discrete 180-Micron pHEMT which operates from DC to 20 GHz. The TGF2018 is designed using TriQuint's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
 
The TGF2018 typically provides 22 dBm of output power at P1dB with gain of 14 dB  and 55% power-added efficiency at 1 dB compression. This performance makes the TGF2018 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
 
Lead-free and RoHS compliant.
Pricing
QtyPrice
1 - 24 $8.12
25 - 99 $6.88
100 - 249 $5.83
250 - 499 $5.45
500 - 999 $5.09
Qty 
 
Availability
Available: 33
QuantityAvailable
+1001 Week
Call 1-877-367-7369 for Availability or Get a Quote
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