The TriQuint TGA2573-2 is a wideband, high power GaN HEMT amplifier fabricated on TriQuint's production 0.25-?m GaN on SiC process. Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 20% PAE, and 10 dB small signal gain at a drain bias of 30 V.
Fully matched to 50 ohm and with integrated DC blocking caps on both RF ports, the TGA2573-2 is ideally suited to support both commercial and defense related applications.
The TGA2573-2 is 100% DC and RF tested on-wafer to ensure compliance to performance specifications. Lead-free and RoHS compliant.