Qorvo: RF Power Transistor: T2G6000528-Q3

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

T2G6000528-Q3
RF Power Transistor, DC to 6 GHz, 7W, 13.5 dB, 28 V, GaN
Manufacturer: Qorvo
Status: Standard
Data Sheet: T2G6000528-Q3 Data Sheet
RoHS Compliance: Qorvo, T2G6000528-Q3, RF Power Transistor, RF Power Transistor, DC to 6 GHz, 7W, 13.5 dB, 28 V, GaN (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Process:
GaN
The TriQuint T2G6000528-Q3 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides greater than 10 dB gain at 6 GHz. The device is constructed with TriQuint's proven 0.25 um production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Features:
  • Frequency: DC to 6 GHz
  • Linear Gain: > 10 dB at 6 GHz
  • Operating Voltage: 28 V
  • Output Power (P3dB): > 7 W at 6 GHz
  • Lead-free and RoHS compliant
  • Low thermal resistance package
  • Pricing
    QtyPrice
    1 - 24 $80.40
    25 - 99 $68.05
    100 - 249 $57.60
    250 - 499 $54.14
    500 - 999 $50.89
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    Availability
    Available: 151
    Call 1-877-367-7369 for Availability or Get a Quote
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