Qorvo: RF Power Transistor: T2G4005528-FS

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

T2G4005528-FS
RF Power Transistor, DC to 3.5 GHz, 55 W, 16 dB, 28 V, GaN
Manufacturer: Qorvo
Status: Standard
Data Sheet: T2G4005528-FS Data Sheet
RoHS Compliance: Qorvo, T2G4005528-FS, RF Power Transistor, RF Power Transistor, DC to 3.5 GHz, 55 W, 16 dB, 28 V, GaN (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0 GHz
Frequency Max:
3.5 GHz
Output Power:
55 W
Gain:
16 dB
% typ. Efficiency:
56.7
Supply Voltage:
28 V
Id:
200 mA
Package:
Earless
Process:
GaN
Also Available
Part FunctionPart NumberDescription
Evaluation Board T2G4005528-FS-EVB1 Qorvo Evaluation board for T2G4005528-FS
The TriQuint T2G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint's proven 0.25 um production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Features:
  • Frequency: DC to 3.5 GHz
  • Linear Gain: > 15 dB at 3.5 GHz
  • Operating Voltage: 28 V
  • Output Power (P3dB): 55 W at 3.5 GHz
  • Lead-free and RoHS compliant
  • Pricing
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    1 - 24 $262.00
    25 - 99 $236.46
    100 - 249 $213.40
    250 - 499 $202.73
    500 - 999 $192.59
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    Availability
    Call 1-877-367-7369 for Availability or Get a Quote
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