Qorvo: RF Power Transistor: T1G4020036-FL

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

T1G4020036-FL
RF Power Transistor, DC to 3.5 GHz, 260 W, 16 dB, 36V, GaN
Manufacturer: Qorvo
Status: Standard
Data Sheet: T1G4020036-FL Data Sheet
RoHS Compliance: Qorvo, T1G4020036-FL, RF Power Transistor, RF Power Transistor, DC to 3.5 GHz, 260 W, 16 dB, 36V, GaN (Rohs Compliant), RFMW Ltd (RFMW) Yes
Export Status:
Specifications
Frequency Min:
0 GHz
Frequency Max:
3.5 GHz
Output Power:
260 W
Gain:
16 dB
Supply Voltage:
36 V
Id:
520 mA
Process:
GaN
Also Available
Part FunctionPart NumberDescription
Evaluation Board T1G4020036-FL EVAL BOARD Qorvo Evaluation board for T1G4020036-FL
Complementary Product T1G4020036-FS Qorvo RF Power Transistor, DC to 3.5 GHz, 260 W, 16 dB, 36V, GaN
Qorvo, RF Power Transistor, T1G4020036-FL, RFMW Ltd (RFMW)

The TriQuint T1G4020036-FL is a 240 W Peak (48 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Lead-free and ROHS compliant.

Pricing
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1 - 24 $656.00
25 - 99 $592.00
100 - 249 $535.00
250 - 499 $508.00
500 - 999 $482.00
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Availability
Call 1-877-367-7369 for Availability or Get a Quote
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