The SZM-3066Z is a high linearity 3.3-3.8 GHz 2W Class AB Heterojunction Bipolar Transistor (HBT) power amplifier housed in a low-cost surface mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and is fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.16 equipment in the 3.3-3.8 GHz bands, and it can operate with a 3V to 6V supply. The external RF output match and bias adjustability allows load line optimization for other applications over narrower bands. It features an output power detector, on/off power control, and high RF overdrive robustness. A 20 dB step attenuator feature can be utilized by switching the 2nd stage power up/down control.