Qorvo: RF Switch: RFSW2100D

RF Switch, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RF Switch
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RFSW2100D Data Sheet
RoHS Compliance: No
The RFSW2100D is a GaN-on-SiC high power discrete RF switch designed for military and commercial wireless infrastructure, industrial/scientific/medical and general purpose broadband RF control and switching applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RFSW2100D is able to achieve low insertion loss and high isolation with better than 10dB return loss across a wide band from 30MHz to 6GHz with proper die attach and heat sinking. The RFSW2100D is an SPDT RF switch suitable for many applications with 75W CW input power compression capability under controlled conditions, VSWR (3:1) and 25°C T CASE as well as ~0.25dB insertion loss and ~40dB small signal isolation at 2GHz.

  • Broadband Operation 30MHz to 6000MHz
  • Advanced GaN HEMT Technology
  • 2GHz Typical Performance
    • Insertion Loss ~0.25dB
    • Isolation ~40dB
  • Pricing
    1 - 24 $132.66
    25 - 99 $108.54
    100 - 249 $84.42
    250 - 499 $60.30
    500 - 999 $57.89