Qorvo: RF Power Transistor: RFHA3944

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RFHA3944
RF Power Transistor, 0- 3.5 GHz, 65W, 15-22 dB, 48V, Flange, GaN
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RFHA3944 Data Sheet
RoHS Compliance: Qorvo, RFHA3944, RF Power Transistor, RF Power Transistor, 0- 3.5 GHz, 65W, 15-22 dB, 48V, Flange, GaN (Rohs Compliant), RFMW Ltd (RFMW) Yes
Export Status:
Specifications
Frequency Min:
0 GHz
Frequency Max:
4 GHz
Output Power:
65 W
Gain:
22 dB
% typ. Efficiency:
65
Supply Voltage:
48 V
Package:
Flange
Process:
GaN
Also Available
Part FunctionPart NumberDescription
Complementary Product RFHA3942 Qorvo RF Power Transistor, 0 - 3.5 GHz, 35W, 15-22 dB, 48V, Flange, GaN
Qorvo, RF Power Transistor, RFHA3944, RFMW Ltd (RFMW)
The RFHA3944 is a 48V, 60W high power discrete amplifier designed for military communications, radar, electronic warfare, general purpose broadband amplifier, commercial wireless infrastructure, and industrial/scientific/Medical applications. Using a second generation advanced high power density Gallium Nitride (GaN) semiconductor process with improved linearity, these high-performance amplifiers achieve high efficiency, excellent linearity, and flat gain and power over a broad frequency range in a single amplifier design. The RFHA3944 is an unmatched GaN transistor, packaged in a hermetic flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished by incorporating simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.
Pricing
Qty