Qorvo: RF Power Transistor: RFHA3942

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RFHA3942
RF Power Transistor, 0 - 3.5 GHz, 35W, 15-22 dB, 48V, Flange, GaN
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RFHA3942 Data Sheet
RoHS Compliance: Qorvo, RFHA3942, RF Power Transistor, RF Power Transistor, 0 - 3.5 GHz, 35W, 15-22 dB, 48V, Flange, GaN (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0 GHz
Frequency Max:
3.5 GHz
Output Power:
35 W
Gain:
22 dB
% typ. Efficiency:
65
Supply Voltage:
48 V
Id:
300 mA
Package:
Flange
Process:
GaN
Also Available
Part FunctionPart NumberDescription
Complementary Product RFHA3944 Qorvo RF Power Transistor, 0- 3.5 GHz, 65W, 15-22 dB, 48V, Flange, GaN
Qorvo, RF Power Transistor, RFHA3942, RFMW Ltd (RFMW)
The RFHA3942 is a 48V, 35W high power discrete amplifier designed for military communications, radar, electronic warfare, general purpose broadband amplifier, commercial wireless infrastructure, and industrial/scientific/Medical applications. Using a second generation advanced high power density Gallium Nitride (GaN) semiconductor process with improved linearity, these high-performance amplifiers achieve high efficiency, excellent linearity, and flat gain and power over a broad frequency range in a single amplifier design. The RFHA3942 is an unmatched GaN transistor, packaged in a hermetic flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished by incorporating simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.
Pricing
Qty