Qorvo: RF Power Transistor: RFHA1101D

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RF Power Transistor Die, DC- 10 GHz, 36.3 dBm, 21.4 dB, GaN ON SiC, DIE
Manufacturer: Qorvo
Status: Standard
Data Sheet: RFHA1101D Data Sheet
RoHS Compliance: Qorvo, RFHA1101D, RF Power Transistor, RF Power Transistor Die, DC- 10 GHz, 36.3 dBm, 21.4 dB, GaN ON SiC, DIE (Rohs Compliant), RFMW Ltd (RFMW) Yes
The RFHA1101D is a 28V, 4.3W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RFHA1101D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper heat sinking and assembly. The RFHA1101D is an unmatched 0.5μm gate, GaN transistor die suitable for many applications with >36dBm 3dB-compressed power, >60% 3dB-compressed drain efficiency, and >21dB small signal gain at 2GHz.

  • Broadband Operation DC to 10GHz
  • Advanced GaN HEMT Technology
  • Small Signal Gain=21.4dB at 2.14GHz
  • 28V Typical Performance
    • Output Power 4.3W at P3dB
    • Drain Efficiency 60% at P3dB
  • Pricing
    1 - 24 $12.10
    25 - 99 $9.90
    100 - 249 $7.70
    250 - 499 $5.50
    500 - 999 $5.28
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