Qorvo: RF Power Transistor: RFHA1101

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RF Power Transistor, DC- 10 GHz, 4.3 W, 21.4 dB, GaN on SiC, Die-on-carrier
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RFHA1101 Data Sheet
RoHS Compliance: Qorvo, RFHA1101, RF Power Transistor, RF Power Transistor, DC- 10 GHz, 4.3 W, 21.4 dB, GaN on SiC, Die-on-carrier (Rohs Compliant), RFMW Ltd (RFMW) Yes
Frequency Min:
0 GHz
Frequency Max:
10 GHz
Output Power:
4.26 W
36.3 dB
% typ. Efficiency:
Supply Voltage:
28 V
44 mA
Die on Carrier
The RFHA1101 is a 28V, 4.3W, GaN on SiC high power discrete amplifier die-on-carrier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RFHA1101 is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper heat sinking and assembly. The RFHA1101 is an unmatched 0.5μm gate, GaN transistor die suitable for many applications with >36dBm 3dB-compressed power, >60% 3dB-compressed drain efficiency, and >21dB small signal gain at 2GHz.

  • Broadband Operation DC to 10GHz
  • Advanced GaN HEMT Technology
  • Small Signal Gain=21.4dB at 2.14GHz 28V
  • Typical Performance
    • Output Power 4.3W at P3dB
    • Drain Efficiency 60% at P3dB
  • Pricing
    1 - 24 $12.10
    25 - 99 $9.90
    100 - 249 $7.70
    250 - 499 $5.50
    500 - 999 $5.28