Qorvo: RF Power Transistor: RFHA1043

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RFHA1043
RF Power Transistor, 1.2 to 1.85 GHz, 150W, 13.6 dB, 48 V, Flange, GaN
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RFHA1043 Data Sheet
RoHS Compliance: Qorvo, RFHA1043, RF Power Transistor, RF Power Transistor, 1.2 to 1.85 GHz, 150W, 13.6 dB, 48 V, Flange, GaN (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
1.2 GHz
Frequency Max:
1.85 GHz
Output Power:
150 W
Gain:
13.6 dB
% typ. Efficiency:
60
Supply Voltage:
48 V
Id:
600 mA
Package:
Flange
Process:
GaN
Qorvo, RF Power Transistor, RFHA1043, RFMW Ltd (RFMW)
The RFHA1043 is optimized for applications in the 1.2GHz to 1.85GHz frequency band. Using an advanced 48V high power density gallium nitride (GaN) semiconductor process optimized for high peak to average ratio applications, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFHA1043 is an input matched GaN transistor packaged in an air cavity ceramic package, which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.
Pricing
QtyPrice
1 - 24 $853.60
25 - 99 $698.40
100 - 249 $543.20
250 - 499 $388.00
500 - 999 $372.48
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