Qorvo: RF Power Transistor: RFHA1042

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RFHA1042
RF Power Transistor, 225 to 450 MHz, 125 W, 18.5 dB, 48V, Flange, GaN
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RFHA1042 Data Sheet
RoHS Compliance: Qorvo, RFHA1042, RF Power Transistor, RF Power Transistor, 225 to 450 MHz, 125 W, 18.5 dB, 48V, Flange, GaN (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0.225 GHz
Frequency Max:
0.45 GHz
Output Power:
125 W
Gain:
18.5 dB
% typ. Efficiency:
60
Supply Voltage:
48 V
Id:
600 mA
Package:
Flange
Process:
GaN
Qorvo, RF Power Transistor, RFHA1042, RFMW Ltd (RFMW)
The RFHA1042 is optimized for military communications, commercial wireless infrastructure and general purpose applications in the 225MHz to 450MHz frequency band. Using an advanced 48V high power density gallium nitride (GaN) semiconductor process optimized for high peak to average ratio applications, these high-performance amplifiers achieve 125W power with high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFHA1042 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.
Pricing
QtyPrice
1 - 24 $792.00
25 - 99 $648.00
100 - 249 $504.00
250 - 499 $360.00
500 - 999 $345.60
Qty