Qorvo: RF Power Transistor: RFHA1025

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RFHA1025
RF Power Transistor, Matched, 960 to 1215 MHz, 54.5 dBm, 17 dB, Flanged Ceramic, 2-Pin, GaN
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RFHA1025 Data Sheet
RoHS Compliance: Qorvo, RFHA1025, RF Power Transistor, RF Power Transistor, Matched, 960 to 1215 MHz, 54.5 dBm, 17 dB, Flanged Ceramic, 2-Pin, GaN (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0.96 GHz
Frequency Max:
1.215 GHz
Output Power:
280 W
Gain:
17 dB
% typ. Efficiency:
55
Supply Voltage:
50 V
Id:
440 mA
Package:
Ceramic Flange
Process:
GaN
Also Available
Part FunctionPart NumberDescription
Evaluation Board RFHA1025PCBA-410 Qorvo Evaluation board for RFHA1025, 0.96 GHz to 1.215 GHz, 50V
Qorvo, RF Power Transistor, RFHA1025, RFMW Ltd (RFMW)

280W GaN Wideband Pulsed Power Amplifier

The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density gallium nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier.

Pricing
QtyPrice
1 - 24 $1,251.36
25 - 99 $1,023.84
100 - 249 $796.32
250 - 499 $568.80
500 - 999 $546.05
Qty