Qorvo: RF Power Transistor: RFHA1023

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RFHA1023
RF Power Transistor, Matched, 1.2 - 1.4 GHz, 250 W, 13dB, 36 V, GaN
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RFHA1023 Data Sheet
RoHS Compliance: Qorvo, RFHA1023, RF Power Transistor, RF Power Transistor, Matched, 1.2 - 1.4 GHz, 250 W, 13dB, 36 V, GaN (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
1.2 GHz
Frequency Max:
1.4 GHz
Output Power:
225 W
Gain:
15 dB
% typ. Efficiency:
58
Supply Voltage:
36 V
Id:
440 mA
Package:
Flange
Process:
GaN
Qorvo, RF Power Transistor, RFHA1023, RFMW Ltd (RFMW)

GaN Wide-Band Pulsed Power Amplifier

The RFHA1023 is a 36V, 225W high power discrete amplifier designed for L-Band pulsed radar, Air Traffic Control and Surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. The RFHA1023 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier.

Pricing
Qty