Qorvo: RF Power Transistor: RFHA1020

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RF Power Transistor, 1.2 - 1.4 GHz, 280W, 15 dB, 48V, GaN
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RFHA1020 Data Sheet
RoHS Compliance: Qorvo, RFHA1020, RF Power Transistor, RF Power Transistor, 1.2 - 1.4 GHz, 280W, 15 dB, 48V, GaN (Rohs Compliant), RFMW Ltd (RFMW) Yes
Frequency Min:
1.2 GHz
Frequency Max:
1.4 GHz
Output Power:
280 W
15 dB
% typ. Efficiency:
Supply Voltage:
50 V
440 mA
Also Available
Part FunctionPart NumberDescription
Evaluation Board RFHA1020PCBA-410 Qorvo Evaluation board for RFHA1020
Qorvo, RF Power Transistor, RFHA1020, RFMW Ltd (RFMW)

GaN Wide-Band Pulsed Power Amplifier

The RFHA1020 is a 50V, 280W high power discrete amplifier designed for L-Band pulsed radar, Air Traffic Control and Surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency, and flat gain over a broad frequency range in a single package. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier.