Qorvo: Amplifier: RFHA1006

Amplifier, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RFHA1006
Amplifier, Power, 225 to 1215 MHz, 39.5dBm, 14dB, AlN Leadless Chip Carrier / SO8, GaN
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RFHA1006 Data Sheet
RoHS Compliance: Qorvo, RFHA1006, Amplifier, Amplifier, Power, 225 to 1215 MHz, 39.5dBm, 14dB, AlN Leadless Chip Carrier / SO8, GaN (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0.225 GHz
Frequency Max:
1.215 GHz
P1dB:
39.5 dBm
Gain:
16 dB
IP3:
28 dBm
Supply Voltage \ Vd:
28 to 32 V
Quiescent Current \ Id:
88 mA
Package:
S0-8 PLASTIC
Power Added Efficiency:
60 %
Gain Flatness:
3 ±dB
VSWR Input:
11 dB
Type:
Amplifier
Qorvo, Amplifier, RFHA1006, RFMW Ltd (RFMW)
The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RFHA1006 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.
Pricing
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