Qorvo: Amplifier: RFHA1003

Amplifier, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

Amplifier, 30 - 512 MHz, 39 dBm P3dB, 19dB, 28V, SOIC-8, GaN
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RFHA1003 Data Sheet
RoHS Compliance: No
Frequency Min:
0.03 GHz
Frequency Max:
0.512 GHz
39.5 dBm
19 dB
Supply Voltage \ Vd:
28 V
Quiescent Current \ Id:
55 mA
Power Added Efficiency:
65 %
Qorvo, Amplifier, RFHA1003, RFMW Ltd (RFMW)
The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RFHA1003 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.