Qorvo: RF Power Transistor: RFG1M20090

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RFG1M20090
RF Power Transistor, 1.8 - 2.2 GHz, 90 W, 14.5 dB, 48V, GaN, RF400-2
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RFG1M20090 Data Sheet
RoHS Compliance: Qorvo, RFG1M20090, RF Power Transistor, RF Power Transistor, 1.8 - 2.2 GHz, 90 W, 14.5 dB, 48V, GaN, RF400-2 (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
1.8 GHz
Frequency Max:
2.2 GHz
Output Power:
90 W
Gain:
14.5 dB
% typ. Efficiency:
35
Supply Voltage:
48 V
Id:
300 mA
Package:
Flange
Process:
GaN
Also Available
Part FunctionPart NumberDescription
Complementary Product RFG1M20180 Qorvo RF Power Transistor, 1.8 - 2.2 GHz, 180 W, 48V, GaN, RF400-2
Qorvo, RF Power Transistor, RFG1M20090, RFMW Ltd (RFMW)
1.8GHz to 2.2GHz 90W GaN Power Amplifier
 
The RFG1M20090 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed and WCDMA and LTE applications. Using an advanced 48V high power density Gallium Nitride (GaN) semiconductor process optimized for high peak to average ratio applications, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFG1M20090 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.
Pricing
QtyPrice
1 - 24 $311.04
25 - 99 $233.28
100 - 249 $172.80
250 - 499 $167.62
500 - 999 $160.71
Qty